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| Composite Transistors XN4314 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 0.650.15 6 2.8 -0.3 +0.2 +0.25 1.5 -0.05 0.650.15 1 0.3 -0.05 0.5 -0.05 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.90.1 +0.2 5 2 0.95 4 3 s Basic Part Number of Element q 1.1-0.1 0.40.2 s Absolute Maximum Ratings Parameter Collector to base voltage Tr1 Collector to emitter voltage Collector current Collector to base voltage Tr2 Collector to emitter voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC VCBO VCEO IC PT Tj Tstg (Ta=25C) Ratings 50 50 100 -50 -50 -100 300 150 -55 to +150 Unit V V mA V V mA mW C C 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC-74 Mini Type Package (6-pin) Marking Symbol: CA Internal Connection 6 5 4 Tr1 1 2 3 Tr2 0 to 0.05 UN1214+UN1114 0.1 to 0.3 0.8 0.16-0.06 +0.2 +0.1 1.450.1 s Features +0.1 +0.1 1 Composite Transistors XN4314 (Ta=25C) Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1/R2 fT VCB = 10V, IE = -1mA, f = 200MHz Conditions IC = 10A, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1k VCC = 5V, VB = 2.5V, RL = 1k -30% 0.17 10 0.21 150 4.9 0.2 +30% 0.25 MHz 80 0.09 0.25 V V V k min 50 50 0.1 0.5 0.2 typ max Unit V V A A mA s Electrical Characteristics q Tr1 Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency q Tr2 Parameter Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1/R2 fT VCB = -10V, IE = 1mA, f = 200MHz Conditions IC = -10A, IE = 0 IC = -2mA, IB = 0 VCB = -50V, IE = 0 VCE = -50V, IB = 0 VEB = -6V, IC = 0 VCE = -10V, IC = -5mA IC = -10mA, IB = - 0.3mA VCC = -5V, VB = -0.5V, RL = 1k VCC = -5V, VB = -2.5V, RL = 1k -30% 0.17 10 0.21 80 -4.9 - 0.2 +30% 0.25 MHz 80 - 0.25 V V V k min -50 -50 - 0.1 - 0.5 - 0.2 typ max Unit V V A A mA Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency 2 Composite Transistors Common characteristics chart PT -- Ta 500 XN4314 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (C) Characteristics charts of Tr1 IC -- VCE 160 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 400 hFE -- IC VCE=10V 30 10 3 1 0.3 Ta=75C 0.1 0.03 0.01 0.1 25C IB=1.0mA Collector current IC (mA) 120 100 80 60 40 20 0 0 2 4 6 8 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA Forward current transfer ratio hFE 140 350 300 250 200 25C 150 -25C 100 50 0 Ta=75C 0.2mA 0.1mA 10 12 -25C 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN 10000 f=1MHz IE=0 Ta=25C VIN -- IO VO=5V Ta=25C 100 30 VO=0.2V Ta=25C Collector output capacitance Cob (pF) 3000 5 Output current IO (A) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 3 Composite Transistors Characteristics charts of Tr2 IC -- VCE -160 -100 XN4314 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 400 hFE -- IC VCE=-10V IB=-1.0mA -30 -10 -3 -1 -0.3 -0.1 -0.03 -25C -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 25C Ta=75C Collector current IC (mA) -120 -100 -80 -60 -40 -20 0 0 -2 -4 -6 -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -0.4mA -0.3mA -0.2mA -0.1mA Forward current transfer ratio hFE -140 300 Ta=75C 200 25C -25C 100 -8 -10 -12 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C -10000 -3000 VO=-5V Ta=25C -1000 -300 VIN -- IO VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) -1000 -300 -100 -30 -10 -3 -100 -30 -10 -3 -1 -0.3 -0.1 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 4 |
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